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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Charge localization and hopping in a topologically engineered graphene nanoribbon
Marcelo Lopes Pereira Júnior1, Pedro Henrique de Oliveira Neto2, Demétrio Antônio da Silva Filho2
1Institute of Physics, University of Brasília, Brasília, 70919-970, Brazil. marcelolpjunior@gmail.com.
Scientific Reports
|March 5, 2021
Summary
Novel graphene nanoribbons (GNRs) exhibit unique topological properties. Charge transport occurs via polaron hopping confined to specific segments, impacting mobility in these advanced materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Graphene nanoribbons (GNRs) are quasi-one-dimensional materials with significant technological potential.
- Recent advancements enable the creation of connected GNRs from distinct armchair GNR families, offering new topological possibilities.
Purpose of the Study:
- To investigate the morphological and electronic properties of novel, topologically controlled GNRs.
- To understand charge carrier behavior and transport mechanisms within these complex nanostructures.
Main Methods:
- Utilized an extended Su-Schrieffer-Heeger model for theoretical analysis.
- Simulated charge injection and polaron formation within the GNR system.
Main Results:
- Charge injection induces polaron formation, which localizes exclusively within the 9-armchair GNR (9-AGNR) segments.
- The topological structure significantly impedes polaron mobility.
- Polaron displacement occurs through hopping between 9-AGNR segments.
Conclusions:
- The study reveals topological constraints on charge transport in connected GNRs.
- Polaron hopping within 9-AGNR segments is identified as the primary charge transport mechanism.
- These findings provide insights for designing GNR-based electronic devices.
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