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Site-Controlled Quantum Emitters in Monolayer MoSe₂.

Leo Yu¹, Minda Deng¹, Jingyuan Linda Zhang¹

¹E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States.

|March 10, 2021

Summary

Engineered quantum emitters in atomically thin semiconductors achieve fast, spin-allowed emission. This breakthrough significantly enhances quantum emitter performance in 2D materials for future quantum technologies.

Keywords:

2D materials Quantum emitters excitons molybdenum diselenide monolayers single photon emitters strain engineering

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Area of Science:

Quantum optics and condensed matter physics.
Materials science and nanotechnology.

Background:

Atomically thin semiconductors are promising for quantum emitters (QEs) due to their unique properties.
Existing QEs in these materials utilize spin-forbidden transitions, limiting their radiative rates and performance.

Purpose of the Study:

To engineer quantum emitters in monolayer MoSe2 with enhanced radiative rates.
To investigate the role of spin-allowed transitions in improving QE performance.

Main Methods:

Utilizing strain confinement in monolayer MoSe2 to create engineered QEs.
Performing photon antibunching measurements to confirm QE properties.
Conducting magneto- and time-resolved photoluminescence to analyze spin-allowed vs. spin-forbidden transitions.

Main Results:

Successfully produced engineered QEs in monolayer MoSe2, confirmed by photon antibunching.
Demonstrated the significance of spin-allowed transitions for quantum emission.
Calculated a radiative rate exceeding 1 ns-1 for spin-allowed quantum emission, two orders of magnitude higher than previous WSe2 QEs.

Conclusions:

Strain confinement in MoSe2 enables the creation of high-performance QEs.
Spin-allowed transitions are crucial for achieving fast radiative rates in 2D material QEs.
This work paves the way for advanced quantum devices based on atomically thin semiconductors.