Fabrication of Flexible In-Plane Gate Nanowire Transistor on a Paper Substrate

Flexible in-plane gate SnO₂ nanowire (NW) transistor gated by SiO₂ acting as a solid electrolyte was fabricated on a paper substrate by using a transmission electron microscopy (TEM) Ni grid shadow mask. The operating voltage of in-plane gate SnO₂ NW transistor was down to 1 V because of the large electric-double-layer (EDL) capacitance of the SiO₂ electrolyte layer. Current on/off ratio (I_on/I_off) and field-effect electron mobility (µ_EF) as well as subthreshold slope of this device were ~10⁶, 74.7cm²·V^-1s^-1 and 80 mV·dec^-1, respectively. The proposed flexible and low-voltage SnO₂ NW transistors on paper substrate exhibit immense potential for applications in portable and flexible electronic devices.