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Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4
Dmitry Ovchinnikov1, Xiong Huang2,3, Zhong Lin1
1Department of Physics, University of Washington, Seattle, Washington 98195, United States.
Researchers explored the tunable electronic structure of manganese bismuth telluride (MnBi2Te4) thin films. They discovered a band crossing and topological phase transition as magnetic order is tuned, offering new insights into topological magnets.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- Manganese bismuth telluride (MnBi2Te4) is a van der Waals magnet with potential for Chern insulator physics.
- Its layered antiferromagnetic order suggests layer-dependent topological states.
- A magnetic field can induce a Chern insulator state in MnBi2Te4.
Purpose of the Study:
- To investigate the evolution of bulk electronic structure in MnBi2Te4 with tuning magnetic states.
- To understand the dependence of topological states on layer thickness.
- To establish a link between electronic structure, magnetic state, and topological order.
Main Methods:
- Utilized multimodal probes on atomically thin MnBi2Te4 devices.
- Continuously tuned the magnetic state of the material.
- Observed changes in bulk electronic structure and topological order.
Main Results:
- Established a one-to-one correspondence between electronic structure, magnetic state, topological order, and layer thickness.
- Observed a band crossing (bulk band gap closing and reopening) during the canted magnetic phase.
- Identified concurrent topological phase transitions in both even- and odd-layer-number devices.
Conclusions:
- The study reveals the intricate interplay between band topology and magnetic order in MnBi2Te4.
- Tuning the magnetic state drives topological phase transitions.
- Findings advance the understanding of novel topological magnets.
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