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Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect

Juhee Jeon1, Young-Soo Park1, Sola Woo1

  • 1Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Journal of Nanoscience and Nanotechnology
|March 14, 2021
PubMed

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