Effect of Plating Layers on the Bonding Strength of p-Type Bi-Te Thermoelectric Elements

In thermoelectric modules, multiple n-type and p-type thermoelectric elements are electrically connected in series on a Cu electrode that is bonded to a ceramic substrate. Defects in the bond between the thermoelectric elements and the Cu electrode could impact the performance of the entire thermoelectric module. This study investigated the effect of plating layers on the bonding strength of p-type Bi-Te thermoelectric elements. Ni and Pd electroplating was applied to Bi-Te thermoelectric elements; further, electroless Ni-P immersion gold (ENIG) plating was applied to Cu electrodes bonded to ceramic substrates. Forming a Pd/Ni electroplating layer on the surface of thermoelectric elements and an ENIG plating layer on the surface of the Cu electrode improved the bonding strength by approximately 3.5 times. When the Pd/Ni and ENIG plating layers were formed on Bi-Te elements and Cu substrates, respectively, the solderability greatly increased; as the solderability increased, the thickness of the diffusion layer formed with the solder layer increased. The improved bonding strength of the Pd/Ni plated thermoelectric element bonded on the ENIG plated substrate is attributed to the enhanced solderability due to the rapid inter-diffusion of Pd and Au into the solder layer and the formation of a stable and non-defected solder reaction interface layer.