Efficiency Enhancement by Insertion of ZnO Recombination Barrier Layer in CdS Quantum Dot-Sensitized Solar Cells

In this investigation we report the formation of thin ZnO recombination barrier layer at TiO₂/CdS interface aimed for the improvement in performance of CdS sensitized solar cell. The film was deposited upon nanocrystalline mesoporous TiO₂ surface by following a simple chemical process and characterized, using UV-Visible spectroscopy, X-ray diffraction and electron dispersive X-ray measurements. The insertion of ZnO thin layer enhances the QDSC (Quantum dot sensitized solar cell) performance, contributed mainly by an increase in open circuit voltage (V_oc) due to reduced electron back transfer from TiO₂ conduction band. Moreover, the analysis of photovoltaic characteristics upon increasing the thickness of the ZnO film reveals that the ZnO recombination barrier layer with optimum thickness at porous TiO₂/CdS interface proved to be an effective potential barrier for minimizing electron back recombination.