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Ionically Connected Floating Electrodes for Long-Distance (>1 mm) Coplanar-Gating Graphene Transistors
Hyunwoo Jo1, Wonwoo Lee2, Hyunseung Jung2
1Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea.
ACS Applied Materials & Interfaces
|March 15, 2021
Summary
Electric double-layer transistors (EDLTs) with coplanar gates can operate effectively over long distances. Using multiple segmented electrolyte layers with floating gates suppresses performance degradation in these unconventional transistor designs.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanoscience
Background:
- Electric double-layer transistors (EDLTs) utilize ion migration in electrolytes for transistor operation.
- Unconventional EDLT configurations place the gate electrode coplanar with the device channel.
- The performance of coplanar-gated EDLTs is sensitive to electrolyte layer distance.
Purpose of the Study:
- To investigate the impact of electrolyte layer distance on coplanar-gated EDLT performance.
- To develop strategies for improving the dynamic characteristics of remote-gated EDLTs.
- To demonstrate an effective method for achieving long-range gating in EDLTs.
Main Methods:
- Fabrication of EDLTs with coplanar gate electrodes.
- Systematic variation of electrolyte layer thickness and distance.
- Implementation of multiple coplanar floating gates bridged by ionic dielectric layers.
- Characterization of transistor dynamic performance at varying gate-channel distances.
Main Results:
- Transistor performance degrades significantly with increasing gate-channel distance in conventional coplanar EDLTs.
- The proposed design with multiple segmented electrolyte layers and floating gates mitigates performance degradation.
- Effective operation of EDLTs was achieved with gate distances exceeding 1 mm using the novel configuration.
Conclusions:
- The distance between the gate and channel critically affects electric double-layer formation and EDLT performance.
- Multiple coplanar floating gates bridged by ionic dielectric layers offer a viable solution for long-range gating in EDLTs.
- This approach enables robust operation of unconventional EDLTs over extended distances, broadening their application potential.
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