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Electrically programmable magnetoresistance in [Formula: see text]-based magnetic tunnel junctions
Jhen-Yong Hong1, Chen-Feng Hung2, Kui-Hon Ou Yang2
1Department of Physics, Tamkang University, New Taipei City, 25137 Taiwan.
Scientific Reports
|March 17, 2021
Summary
This study explores multi-state resistive switching in [Formula: see text]-based magnetic tunnel junctions (MTJs). Oxygen vacancies control multiple states, enabling potential multi-bit memory devices.
Area of Science:
- Spintronics
- Materials Science
- Nanotechnology
Background:
- Magnetic tunnel junctions (MTJs) are crucial for magnetic memory devices.
- Understanding resistive switching mechanisms is key to advancing memory technology.
Purpose of the Study:
- To investigate spin-dependent transport and I-V hysteresis in [Formula: see text]-based MTJs.
- To elucidate the role of oxygen vacancies in achieving multiple resistive states.
Main Methods:
- Fabrication and characterization of [Formula: see text]-based MTJs.
- Measurement of spin-dependent transport properties.
- Analysis of I-V hysteresis and magnetoresistance at different states.
- Temperature-dependent resistance measurements.
Main Results:
- Observed bipolar resistive switching and four distinct resistive states (HRS and LRS) in a single device.
- Temperature dependence indicates resistive switching is not due to metal filaments.
- Oxygen vacancies in [Formula: see text] are identified as critical for resistive state determination.
Conclusions:
- Multiple resistive states in [Formula: see text]-based MTJs can be controlled by electric and magnetic fields.
- This offers potential for developing advanced multi-bit memory devices.
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