One-dimensional weak antilocalization effect in 1T'-MoTe₂nanowires grown by chemical vapor deposition

We present a chemical vapor deposition method for the synthesizing of single-crystal 1T'-MoTe₂nanowires and the observation of one-dimensional weak antilocalization effect in 1T'-MoTe₂nanowires for the first time. The diameters of the 1T'-MoTe₂nanowires can be controlled by changing the flux of H₂/Ar carrier gas. Spherical-aberration-corrected transmission electron microscopy, selected area electron diffraction and energy dispersive x-ray spectroscopy (EDS) reveal the 1T' phase and the atomic ratio of Te/Mo closing to 2:1. The resistivity of 1T'-MoTe₂nanowires shows metallic behavior and agrees well with the Fermi liquid theory (<20 K). The coherence length extracted from 1D Hikami-Larkin-Nagaoka model with the presence of strong spin-orbit coupling is proportional toT^-0.36, indicating a Nyquist electron-electron interaction dephasing mechanism at one dimension. These results provide a feasible way to prepare one-dimensional topological materials and is promising for fundamental study of the transport properties.