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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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High-Frequency Graphene Base Hot-Electron Transistor.

Bor-Wei Liang1, Wen-Hao Chang2, Hung-Yu Lin1

  • 1Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan.

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|March 18, 2021
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Summary

Researchers developed a vertical graphene base hot-electron transistor for high-speed radio frequency applications. This novel device integrates two-dimensional materials with silicon technology, achieving a 65 GHz cutoff frequency.

Keywords:
hot carriershot-electron transistorradio frequency electronicstunneling electronicstwo-dimensional materials

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Electronics Engineering

Background:

  • Integration of graphene and 2D materials with silicon is crucial for miniaturized electronics.
  • High-frequency operation is essential for advanced high-speed applications.

Purpose of the Study:

  • To demonstrate a vertical graphene base hot-electron transistor.
  • To achieve radio frequency (RF) performance using integrated 2D material and silicon technology.

Main Methods:

  • Fabrication of a vertical graphene base hot-electron transistor.
  • Characterization of the transistor's electrical performance at room temperature.
  • Tuning the cutoff frequency by adjusting the collector-base bias.

Main Results:

  • The device achieved a high current density of ~200 A/cm².
  • Demonstrated high common base current gain (α* ~ 99.2%) and moderate common emitter current gain (β* ~ 2.7).
  • Achieved an intrinsic current gain cutoff frequency of ~65 GHz, tunable from 54 to 65 GHz.

Conclusions:

  • The vertical graphene base hot-electron transistor shows promising performance in the radio frequency regime.
  • This integrated 2D material and silicon technology offers a potential pathway for ultra-fast radio frequency tunneling hot-carrier electronics.