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Engineering Band-Type Alignment in CsPbBr3 Perovskite-Based Artificial Multiple Quantum Wells.

Kwang Jae Lee1,2, Noor A Merdad1,2,3, Partha Maity4

  • 1Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.

Advanced Materials (Deerfield Beach, Fla.)
|March 24, 2021
PubMed
Summary

Researchers created novel perovskite quantum wells with tunable band alignments. These artificial multiple quantum wells (MQWs) show unique carrier dynamics and improved photodiode performance, advancing optoelectronic devices.

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CsPbBr 3bandgap engineeringmultiple quantum wellsperovskitephotodiodes

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Semiconductor multiple quantum wells (MQWs) are crucial for optoelectronics.
  • Halide perovskites, leading emerging semiconductors, face challenges in creating diverse bandgap alignments in MQWs due to limited barrier materials.

Purpose of the Study:

  • To introduce artificial perovskite-based MQWs using novel organic barrier materials.
  • To achieve various bandgap alignments (type-I and type-II) in perovskite MQWs.
  • To investigate the impact of different band alignments on carrier dynamics and photodiode performance.

Main Methods:

  • Fabrication of five-stacked perovskite-based MQWs using specific organic barrier materials.
  • Characterization of band alignments (type-I and type-II) using band offset analysis.
  • Transient absorption spectroscopy to study charge carrier dynamics.
  • Fabrication and testing of photodiodes based on the different MQW types.

Main Results:

  • Successfully created three distinct perovskite-based MQWs with type-I and type-II band alignments.
  • Transient absorption spectroscopy revealed differing charge carrier dynamics between type-I and type-II structures.
  • Photodiodes exhibited distinct carrier behaviors and photoresponse characteristics based on MQW type.
  • Type-II MQW photodiodes showed over a tenfold increase in rectification ratio compared to bulk perovskite devices.

Conclusions:

  • The developed artificial perovskite MQWs enable diverse bandgap engineering.
  • These structures offer new possibilities for advanced halide-perovskite-based quantum devices.
  • Bandgap engineering via simple quantum barrier considerations is a viable strategy for novel optoelectronic applications.