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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Related Experiment Video

Updated: Nov 11, 2025

Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System
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All Si3 N4 Nanowires Membrane Based High-Performance Flexible Solid-State Asymmetric Supercapacitor.

Xuemin Yin1, Hejun Li1, Liyuan Han1

  • 1State Key Laboratory of Solidification Processing, Shaanxi Province Key Laboratory of Fiber Reinforced Light Composite Materials, Carbon/Carbon Composites Research Center, Northwestern Polytechnical University, Xi'an, 710072, China.

Small (Weinheim an Der Bergstrasse, Germany)
|March 25, 2021
PubMed
Summary

Flexible energy storage devices were developed using silicon nitride nanowires coated with graphene and metal oxides. This novel design achieves high energy density and excellent cycling performance for advanced portable electronics.

Keywords:
FeOOH nanorodsNiCo 2O 4 hollow nanospheresSi 3N 4 nanowires membraneflexible asymmetric supercapacitorvertical graphene nanosheets

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrochemistry

Background:

  • Growing demand for flexible and portable electronic devices necessitates advanced energy storage solutions.
  • Existing flexible energy storage often compromises on energy density, weight, or durability.
  • Vertically oriented graphene nanosheets (VGNs) offer potential as conductive substrates for flexible electrodes.

Purpose of the Study:

  • To develop a novel flexible electrode material for high-performance energy storage devices.
  • To investigate the electrochemical properties of silicon nitride nanowires (Si3N4 NWs) functionalized with VGNs and metal oxides.
  • To fabricate and characterize a flexible solid-state asymmetric supercapacitor (ASC) based on these materials.

Main Methods:

  • In situ fabrication of VGNs on Si3N4 NWs membrane via plasma-enhanced chemical vapor deposition (PECVD).
  • Preparation of NiCo2O4 hollow nanospheres (HSs) and FeOOH amorphous nanorods (NRs) as electrode materials on Si3N4 NWs@VGNs.
  • Assembly of an all Si3N4 NWs membrane-based flexible solid-state ASC using the prepared electrodes and NWs as a separator.

Main Results:

  • The synthesized Si3N4 NWs@VGNs@NiCo2O4 HSs and Si3N4 NWs@VGNs@FeOOH NRs electrodes demonstrated excellent electrochemical performance.
  • The assembled ASC achieved a high energy density of 96.3 Wh kg−1 with a wide operating potential window of 1.8 V.
  • The flexible ASC exhibited outstanding cycling stability (91.7% after 6000 cycles) and good mechanical flexibility.

Conclusions:

  • This study presents a viable strategy for designing flexible electrode materials using Si3N4 NWs and VGNs.
  • The developed flexible solid-state ASC shows promising potential for next-generation portable electronic applications.
  • The findings broaden the application scope of Si3N4 NWs in the field of flexible energy storage.