Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Doping is crucial for tuning electronic properties and adding functionalities to two-dimensional (2D) materials.
• Achieving wide-range, large-scale uniform control over doping concentrations in monolayer 2D materials remains a significant challenge.

Purpose of the Study:

• To develop a method for *in situ* chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2).
• To achieve widely tunable doping concentrations in MoS2 with large-scale uniformity.
• To demonstrate the application of heavily doped MoS2 in artificial synaptic transistors.

Main Methods:

• Utilized *in situ* chemical vapor deposition (CVD) for synthesizing vanadium-doped monolayer MoS2.
• Employed different vanadium precursors to precisely regulate doping concentrations, ranging from 0.3 to 13.1 atom %.
• Fabricated artificial synaptic transistors using the synthesized doped MoS2 as the channel material.

Main Results:

• Successfully achieved *in situ* growth of vanadium-doped monolayer MoS2 with tunable doping concentrations.
• Demonstrated large-scale uniform doping by selecting appropriate vanadium precursors.
• Mimicked synaptic functions, including potentiation, depression, and learning, using the fabricated transistors.

Conclusions:

• Developed a feasible and scalable method for doping monolayer 2D semiconductors like MoS2.
• The vanadium-doped MoS2 exhibits potential for creating efficient artificial synaptic transistors.
• This work advances the application of doped 2D materials in neuromorphic computing and electronic devices.