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Coherent Fourier scatterometry using orbital angular momentum beams for defect detection
Optics Express
|March 27, 2021
Summary
New defect inspection techniques using orbital angular momentum (OAM) beams offer significantly higher sensitivity for semiconductor manufacturing. These advanced methods improve signal-to-noise ratios for critical dimension inspection, enhancing quality assurance.
Area of Science:
- Semiconductor Manufacturing
- Optical Metrology
- Nanotechnology
Background:
- Defect inspection is crucial for semiconductor quality assurance.
- Current Coherent Fourier Scatterometry (CFS) with Gaussian beams faces limitations with shrinking critical dimensions.
- Extreme ultraviolet lithography demands higher sensitivity and throughput in inspection.
Purpose of the Study:
- Introduce novel bright-field CFS techniques using orbital angular momentum (OAM) beams.
- Develop defect inspection methods with enhanced sensitivity and robustness for nanoscale features.
- Address the need for advanced in-line inspection in high-volume semiconductor manufacturing.
Main Methods:
- Utilized bright-field Coherent Fourier Scatterometry (CFS) with coherent beams carrying orbital angular momentum (OAM).
- Developed a differential OAM CFS technique that does not require pre-established databases for symmetric patterns.
- Employed numerical investigations to evaluate performance on amplitude and phase defects.
Main Results:
- Demonstrated superior performance of OAM-based CFS techniques compared to conventional Gaussian beam CFS.
- Achieved up to an order of magnitude higher signal-to-noise ratio for defect detection.
- Showcased enhanced sensitivity and robustness for in-line nanoscale defect inspection.
Conclusions:
- Novel OAM-based CFS techniques significantly improve nanoscale defect inspection sensitivity and robustness.
- Differential OAM CFS offers a unique, database-independent inspection method for symmetric structures.
- These advancements are vital for next-generation semiconductor manufacturing, particularly with extreme ultraviolet lithography.
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