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Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
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Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating
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Coherent Fourier scatterometry using orbital angular momentum beams for defect detection.

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    New defect inspection techniques using orbital angular momentum (OAM) beams offer significantly higher sensitivity for semiconductor manufacturing. These advanced methods improve signal-to-noise ratios for critical dimension inspection, enhancing quality assurance.

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    Area of Science:

    • Semiconductor Manufacturing
    • Optical Metrology
    • Nanotechnology

    Background:

    • Defect inspection is crucial for semiconductor quality assurance.
    • Current Coherent Fourier Scatterometry (CFS) with Gaussian beams faces limitations with shrinking critical dimensions.
    • Extreme ultraviolet lithography demands higher sensitivity and throughput in inspection.

    Purpose of the Study:

    • Introduce novel bright-field CFS techniques using orbital angular momentum (OAM) beams.
    • Develop defect inspection methods with enhanced sensitivity and robustness for nanoscale features.
    • Address the need for advanced in-line inspection in high-volume semiconductor manufacturing.

    Main Methods:

    • Utilized bright-field Coherent Fourier Scatterometry (CFS) with coherent beams carrying orbital angular momentum (OAM).
    • Developed a differential OAM CFS technique that does not require pre-established databases for symmetric patterns.
    • Employed numerical investigations to evaluate performance on amplitude and phase defects.

    Main Results:

    • Demonstrated superior performance of OAM-based CFS techniques compared to conventional Gaussian beam CFS.
    • Achieved up to an order of magnitude higher signal-to-noise ratio for defect detection.
    • Showcased enhanced sensitivity and robustness for in-line nanoscale defect inspection.

    Conclusions:

    • Novel OAM-based CFS techniques significantly improve nanoscale defect inspection sensitivity and robustness.
    • Differential OAM CFS offers a unique, database-independent inspection method for symmetric structures.
    • These advancements are vital for next-generation semiconductor manufacturing, particularly with extreme ultraviolet lithography.