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Area of Science:

  • Optics and Photonics
  • Materials Science
  • Terahertz (THz) Technology

Background:

  • Third-order nonlinearities (χ(3)) are crucial for controlling light pulses in materials like silicon and silica.
  • Degenerate four-wave mixing (DFWM) quantifies nonlinear sheet susceptibility (χ(3)L) and enables applications like optically gated photon detection.

Purpose of the Study:

  • To investigate the third-order nonlinear properties of silicon doped with phosphorus (P) or bismuth (Bi).
  • To assess the potential of these materials for THz light generation and manipulation.

Main Methods:

  • Utilized picosecond pulses from a free electron laser for experiments.
  • Employed degenerate four-wave mixing to measure the third-order nonlinear sheet susceptibility (χ(3)L).

Main Results:

  • Achieved a significantly higher χ(3)L value in P- or Bi-doped silicon within the THz domain compared to all previously reported materials.
  • Demonstrated the potential for efficient generation of intense coherent THz light via upconversion.

Conclusions:

  • P- or Bi-doped silicon offers unprecedented nonlinear optical properties in the THz range.
  • These findings pave the way for advanced THz technologies, including non-degenerate mixing and nonlinear optics beyond the perturbative regime.