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Nanodevices Tend to Be Round.

Georges Pananakakis1, Gérard Ghibaudo1, Sorin Cristoloveanu1

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Square nanowire transistors transition to a circular conductive region at smaller sizes. This shape shift, observed in Gate-All-Around junctionless transistors, is influenced by device dimensions and operating conditions.

Keywords:
MOSFETSOIgate-all-aroundjunctionlessnanoelectronicsnanowire

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Area of Science:

  • Semiconductor device physics
  • Nanotechnology
  • Materials science

Background:

  • Nanowire transistors are crucial components in modern electronics.
  • The geometry of the conductive channel significantly impacts transistor performance.
  • Gate-All-Around (GAA) junctionless transistors offer unique electrostatic control.

Purpose of the Study:

  • To investigate the geometric transition of the conductive region in square cross-section nanowire transistors.
  • To identify the critical factors and criteria driving the square-to-circle shape shift.
  • To analyze the consequences of this geometric metamorphosis on device behavior.

Main Methods:

  • Theoretical analysis and simulation of Gate-All-Around junctionless transistors.
  • Definition of a geometrical criterion for the square-to-circle conductive region transition.
  • Analysis of simulation results for nanowires with varying dimensions and doping levels.

Main Results:

  • Square nanowire transistors exhibit a transition to a circle-like conductive region under specific conditions.
  • This transition is more pronounced in smaller nanowires (below 50 nm), with lower doping, and higher gate voltages.
  • The study defines the geometrical criterion for this square-to-circle shift.

Conclusions:

  • The square-to-circle transition is a natural phenomenon in sub-50 nm nanowires.
  • This geometric change has significant implications for the performance and modeling of nanowire transistors.
  • Findings are supported by evidence from inversion-mode GAA MOSFETs and thermal diffusion processes, indicating universality.