Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Clipper Circuit01:18

Clipper Circuit

597
A clipper circuit is a fundamental wave-shaping device that harnesses the unique properties of diodes to alter and control waveform characteristics. This technology is widely used in electronic devices, especially in television and radar communication systems, where it enhances waveform modulation in both transmitters and receivers.
The operation of a clipper circuit can be exemplified by analyzing a dual-clipper configuration setup that integrates two ideal diodes, each paired with a biasing...
597
Design Example01:23

Design Example

396
The innovation of touch-tone telephony revolutionized the telecommunications industry by replacing the traditional rotary dial with a dual-tone multi-frequency (DTMF) signaling system. This system uses a matrix-style keypad with buttons arranged in four rows and three columns, creating 12 distinct signals each assigned to a pair of frequencies. Each button press results in a simultaneous generation of two sinusoidal tones – one from a low-frequency group (697 to 941 Hz) and one from a...
396
Switching of BJT01:22

Switching of BJT

518
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
518
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

772
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
772
Schottky Barrier Diode01:27

Schottky Barrier Diode

542
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
542
MOSFET Amplifiers01:17

MOSFET Amplifiers

242
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
242

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Assessing the content and quality of gastrointestinal endoscopy videos on TikTok, Bilibili, and Kwai: a cross - sectional study.

BMC gastroenterology·2026
Same author

AI-Assisted Literature Mining Reveals Spatiotemporal Heterogeneity and Progression Trajectories of Traditional Chinese Medicine Syndromes in Coronary Heart Disease in China.

Journal of evidence-based medicine·2026
Same author

Comparative Trends in the Burden of Depressive Disorders in China and Globally, 1990-2021: Evidence From the Global Burden of Disease 2021.

Alpha psychiatry·2026
Same author

Disease risk perception, health intervention intention and their influencing factors among prehypertensive and hypertensive populations: a cross-sectional study with 1050 participants.

BMC public health·2026
Same author

β-Hydroxybutyrate Improves Glucose Metabolism in Streptozotocin-Induced Type 1 Diabetes by Inhibiting Gut and Liver Glucose Transporters via GPR109A.

Diabetes·2026
Same author

RNF112 mediates immunosuppression to inhibit the proliferation of cervical cancer by Foxm1.

Translational cancer research·2026

Related Experiment Video

Updated: Oct 9, 2025

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation
10:33

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation

Published on: February 27, 2019

8.6K

A Review of Sharp-Switching Band-Modulation Devices.

Sorin Cristoloveanu1, Joris Lacord2, Sébastien Martinie2

  • 1IMEP-LAHC, Université Grenoble Alpes, Grenoble INP & CNRS, 3 Parvis Louis Néel, CS 50257, CEDEX 1, 38016 Grenoble, France.

Micromachines
|December 24, 2021
PubMed
Summary

Band-modulation devices, enabled by advanced silicon-on-insulator technology, offer sharp switching and reconfigurable circuits. These devices show promise for memory, ESD protection, and sensing applications with standard silicon processing.

Keywords:
ESDEsaki diodeFDSOISOIband modulationelectrostatic dopingmemorynanoelectronicsreconfigurable devicesensorssharp switchingultrathin body

More Related Videos

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K
Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.1K

Related Experiment Videos

Last Updated: Oct 9, 2025

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation
10:33

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation

Published on: February 27, 2019

8.6K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K
Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.1K

Area of Science:

  • Semiconductor device physics
  • Materials science
  • Microelectronics engineering

Background:

  • Recent advancements in fully-depleted silicon-on-insulator (FD-SOI) and ultrathin-body technologies have enabled novel device concepts.
  • The development of gate-controlled electrostatic doping is a key enabler for new device architectures.
  • Lateral PIN diodes with additional gates can form reconfigurable PNPN structures.

Purpose of the Study:

  • To review the implementation, operation, and applications of band-modulation devices.
  • To present physical and compact models for understanding device characteristics.
  • To highlight the potential of these devices in various electronic systems.

Main Methods:

  • Review of recent literature and technological advancements in semiconductor devices.
  • Development and presentation of physical and compact device models.
  • Analysis of device characteristics in steady-state and transient modes.

Main Results:

  • Band-modulation devices exhibit unrivalled sharp-switching capabilities.
  • Models accurately describe output and transfer characteristics.
  • Demonstrated potential for quasi-vertical current switching.

Conclusions:

  • Band-modulation devices are compatible with modern silicon processing and standard operating conditions.
  • These devices offer promising solutions for capacitorless memories, ESD protection, sensing, and reconfigurable circuits.
  • The technology enables novel functionalities with high performance and efficiency.