High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target
Marcin Winnicki1, Artur Wiatrowski2, Michał Mazur2
1Department of Metal Forming, Welding and Metrology, Wrocław University of Science and Technology, Lukasiewicza 5, 50-371 Wroclaw, Poland.
Materials (Basel, Switzerland)
|April 3, 2021
Summary
High Power Impulse Magnetron Sputtering (HiPIMS) produced indium tin oxide (ITO) films at low temperatures. An oxygen-rich atmosphere yielded the best results, achieving 88% transmission and 0.03 Ω·cm resistivity.
Area of Science:
- Materials Science
- Thin Film Deposition
- Surface Engineering
Background:
- Indium tin oxide (ITO) is crucial for transparent conductive films.
- Low-temperature deposition methods are needed for flexible electronics.
- High Power Impulse Magnetron Sputtering (HiPIMS) offers advantages for thin film synthesis.
Purpose of the Study:
- To deposit indium tin oxide (ITO) transparent thin films using HiPIMS at low substrate temperatures.
- To investigate the effect of Ar:O2 gas mixtures on ITO film properties.
- To optimize the HiPIMS process for high optical transmission and low electrical resistivity.
Main Methods:
- A hybrid In2O3/Sn composite target was prepared using cold spraying.
- ITO films were deposited via HiPIMS using varying Ar:O2 ratios (100:0 to 0:100).
- A custom high-voltage power supply and unbalanced magnetron source were employed.
Main Results:
- ITO films (30-40 nm thickness) were deposited using 300 pulses at 900 V.
- An Ar:O2 mixture of 0:100 vol.% resulted in the highest optical transmission (88% at 550 nm).
- This optimal condition also yielded the lowest electrical resistivity (0.03 Ω·cm).
Conclusions:
- HiPIMS is effective for low-temperature ITO film deposition.
- An oxygen-rich atmosphere is essential for achieving high-quality ITO films.
- Optimized HiPIMS parameters enable the production of ITO with excellent optoelectronic properties.
