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Thickness-Dependent Band Gap Modification in BaBiO3.

Rosa Luca Bouwmeester1, Alexander Brinkman1, Kai Sotthewes1

  • 1MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands.

Nanomaterials (Basel, Switzerland)
|April 3, 2021
PubMed
Summary
This summary is machine-generated.

Barium bismuthate (BaBiO3) thin films transition from wide-gap to small-gap semiconductors as thickness decreases. This study confirms the oxygen breathing mode

Keywords:
BaBiO3band gapcomplex oxideperovskitepulsed laser depositionscanning tunneling miscroscopyspectroscopysurface reconstruction

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Thin film physics

Background:

  • Barium bismuthate (BaBiO3) is typically an insulator.
  • Theoretical models predict metallicity in ultra-thin BaBiO3 films due to suppressed oxygen octahedra breathing modes.
  • Recent studies suggest a link between oxygen breathing mode and electronic properties.

Purpose of the Study:

  • To investigate the influence of the oxygen breathing mode on the band gap of BaBiO3 thin films.
  • To study the electronic properties of BaBiO3 films across a range of thicknesses.
  • To determine if metallicity is achieved in ultra-thin BaBiO3 films.

Main Methods:

  • In-situ scanning tunneling microscopy (STM) was used to probe electronic properties.
  • A series of BaBiO3 films with varying thicknesses were prepared.
  • Raman spectroscopy was employed to analyze phonon modes.

Main Results:

  • A transition from a wide band gap (> 1.2 eV) to a small band gap (≈ 0.07 eV) was observed with decreasing BaBiO3 film thickness.
  • No metallic state was detected, even in the ultra-thin film limit.
  • The band gap size correlated with the intensity of the oxygen breathing phonon mode, measured by Raman spectroscopy.

Conclusions:

  • The oxygen breathing mode significantly influences the band gap of BaBiO3 thin films.
  • The transition to a smaller band gap is driven by changes in the oxygen breathing mode, not metallicity.
  • Ultra-thin BaBiO3 films exhibit semiconducting behavior, contrary to some theoretical predictions.