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Updated: Nov 9, 2025

Full-field Strain Measurements for Microstructurally Small Fatigue Crack Propagation Using Digital Image Correlation Method
Published on: January 16, 2019
Raw and processed data used in the simultaneous analysis of electrical characteristics and microstructure of
J G Troughton1, B Marchiori1, R Delattre1
1Department of Flexible Electronics, Mines Saint-Etienne, Center of Microelectronics in Provence, Gardanne, France.
Abstract:
Here is presented raw and analysed data collected during study of the evolution, with uniaxial stretching, of the electrical and microcrystalline characteristics of polystyrene sulfonate doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) organic electrochemical transistors (OECTs). X-ray diffraction data from GIWAXS measurements of the PEDOT:PSS material, performed at the SOLEIL light source are presented in raw and partially analysed forms. Current-voltage data, collected concurrently with the GIWAXS data, are also presented, and the evolution of the transconductance of the OECT devices with stretching is shown. GIWAXS data are only examined along the qz specular reflection ridge, and scans along this ridge are extracted and presented. However, the off-specular data may also be of interest to readers and is therefore made available here in its entirety.
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