Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate.

Area of Science:

• Optoelectronics
• Materials Science

Background:

• Photonic transistor memory is crucial for next-generation light fidelity (Li-Fi) applications, offering high speed, security, and low power.
• Current devices often require electrical bias, limiting data transmission efficiency and energy consumption.

Purpose of the Study:

• To develop a novel photonic transistor memory with fully optical "photo-writing" and "photo-erasing" capabilities.
• To overcome the limitations of electrical bias in existing photonic memory devices.

Main Methods:

• Utilized complementary light absorption between n-type BPE-PTCDI and CH3NH3PbBr3/poly(2-vinylpyridine) hybrid floating gate for dual optical manipulation.
• Fabricated a two-terminal flexible photonic memory by removing the rigid gate electrode.

Main Results:

• Achieved full-spectrum operation with stable photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) cycles.
• Demonstrated a high memory ratio of ~10^4 and long-term retention exceeding 10^4 s.
• Showcased stable electrical performance after 1000 bending cycles and multilevel functionality in the flexible device.

Conclusions:

• The novel photonic transistor memory offers fully optical functionality, enabling efficient and low-power operation for Li-Fi.
• The flexible, two-terminal device exhibits robust performance and multilevel behavior, indicating significant potential for future photoactive electronic devices.