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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
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Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis.

Imtiaz Ahmed1, Dana Weinstein1

  • 1Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.

Micromachines
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PubMed
Summary

This study compares switchable electromechanical transducers in AlN/GaN heterostructures for reconfigurable radio frequency (RF) building blocks. Transducers with Ohmic interdigital transducers (IDTs) and Schottky gates demonstrated superior performance for RF applications.

Keywords:
2DEGGaNMEMS resonatorheterostructurephonon trap cavitypiezoelectricswitchablesymmetric lamb modetransducers

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Physics

Background:

  • Advanced radio frequency (RF) systems require reconfigurable components.
  • Aluminum nitride (AlN) and gallium nitride (GaN) heterostructures offer potential for novel RF devices.

Purpose of the Study:

  • To comprehensively compare switchable electromechanical transducers in AlN/GaN heterostructures.
  • To evaluate transducer performance for next-generation ad hoc radios.
  • To investigate the impact of different DC bias configurations on electromechanical actuation.

Main Methods:

  • Fabrication and characterization of AlN/GaN heterostructure transducers.
  • Utilizing interdigital transducers (IDTs) to excite Lamb modes.
  • Implementing DC bias for two-dimensional electron gas (2DEG) channel depletion.
  • Developing equivalent circuit models for parameter extraction in ON/OFF states.

Main Results:

  • Achieved complete suppression of the mechanical mode in the OFF state.
  • Demonstrated effective excitation of the symmetric (So) Lamb mode.
  • Identified superior performance in transducers with Ohmic IDTs and a Schottky control gate.
  • Presented frequency scaling of the resonant mode for various transducer designs.

Conclusions:

  • Switchable electromechanical transducers in AlN/GaN heterostructures are viable for reconfigurable RF building blocks.
  • The design featuring Ohmic IDTs and a Schottky control gate offers the best performance.
  • This work provides a foundational comparative study for future RF component development.