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High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles.

Muhammad Naqi1, Nayoung Kwon1, Sung Hyeon Jung1

  • 1Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.

Nanomaterials (Basel, Switzerland)
|April 30, 2021
PubMed
Summary
This summary is machine-generated.

We developed a low-temperature non-volatile memory (NVM) device using indium gallium zinc oxide and gold nanoparticles. This thin-film transistor (TFT) NVM offers a large memory window and stable performance for future memory applications.

Keywords:
IGZOflash memory devicemonolayer Au nanoparticlesnon-volatile memory devicethree-terminal memory device

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) are crucial for memory applications due to their excellent characteristics.
  • Indium gallium zinc oxide (IGZO) and gold nanoparticles (AuNPs) are promising materials for advanced electronic devices.

Purpose of the Study:

  • To develop a low-temperature processed TFT-type NVM device using IGZO and monolayer AuNPs.
  • To evaluate the memory characteristics, including memory window, endurance, and retention time.
  • To confirm the material properties of the fabricated NVM device.

Main Methods:

  • Fabrication of a top-gate TFT-type NVM device using IGZO semiconductor and monolayer AuNPs as a floating gate.
  • Characterization of material properties using transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS).
  • Evaluation of memory performance, including memory window (ΔVth), endurance (Program/Erase cycles), and retention time.

Main Results:

  • The NVM device achieved a large memory window of 13.7 V.
  • Material characterization confirmed the properties of the AuNPs and IGZO layers.
  • The device demonstrated stable endurance up to 100 Program/Erase cycles and reliable retention time up to 10^4 s.

Conclusions:

  • The low-temperature processed TFT-type NVM device using IGZO and AuNPs exhibits excellent memory characteristics.
  • The device shows potential for futuristic non-volatile memory technology due to its large memory window, stable endurance, and high retention time.