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Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate

Kalparupa Mukherjee¹, Carlo De Santi¹, Matteo Borga²

¹Department of Information Engineering, University of Padua, 35131 Padova, Italy.

Materials (Basel, Switzerland)

|May 5, 2021

Summary

Reliable vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistors (MOSFETs) are crucial for efficient power conversion. This study addresses key challenges in developing these GaN-on-Si MOSFETs for enhanced performance and reliability.

Keywords:

MOS degradation quasi-vertical GaN reliability threshold voltage trapping trench MOS vertical GaN

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Published on: July 17, 2020

Area of Science:

Materials Science
Electrical Engineering
Semiconductor Physics

Background:

Vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistors (MOSFETs) are vital for advanced power conversion.
Developing reliable GaN-on-Si MOSFETs on foreign substrates presents significant challenges.

Purpose of the Study:

To provide an overview of challenges in developing reliable vertical GaN-on-Si trench MOSFETs.
To discuss strategies for identifying and mitigating key reliability issues.
To highlight advancements in GaN-on-Si MOSFET technology for power applications.

Main Methods:

Analysis of leakage and doping considerations for high breakdown voltage.
Investigation of gate design techniques, including dielectric composition and trench structure optimization.
Application of pulsed techniques and light-assisted de-trapping for analyzing trapping effects and dynamic performance.

Main Results:

Strategies for optimizing vertical GaN-on-Si stacks to achieve high breakdown voltage.
Effective gate design variations to enhance breakdown performance.
Methods for characterizing and comparing device trapping effects to assess dynamic performance.

Conclusions:

Addressing leakage, doping, gate design, and trapping effects is essential for reliable vertical GaN-on-Si trench MOSFETs.
Optimized device structures and characterization techniques are key to improving GaN-based power transistor performance.
This research contributes to the advancement of efficient power conversion technologies using GaN-on-Si MOSFETs.