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Related Experiment Video

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750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers.

Shuzhen You1,2, Yilong Lei1,2, Liang Wang1,2

  • 1Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.

Micromachines
|January 8, 2025
PubMed
Summary

This study demonstrates a novel gallium nitride (GaN) buffer on silicon-on-insulator (SOI) substrates using a reversed stepped superlattice (RSSL) buffer. This method achieves excellent wafer quality and high breakdown voltage for advanced electronic devices.

Keywords:
GaN-on-SOImetal–organic chemical vapor depositionreversed stepped superlattice buffer

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Epitaxial Growth

Background:

  • Gallium nitride (GaN) is a critical material for high-power and high-frequency electronics.
  • Growing high-quality GaN on large-diameter substrates like silicon-on-insulator (SOI) presents challenges in managing stress and crystal defects.
  • Existing GaN-on-Si buffer layers often suffer from high wafer curvature and lower breakdown fields.

Purpose of the Study:

  • To develop and demonstrate an improved GaN buffer structure on 200 mm SOI substrates.
  • To mitigate wafer bowing and enhance the crystal quality and electrical properties of GaN epitaxial layers.
  • To enable the fabrication of high-performance GaN devices, such as D-mode HEMTs.

Main Methods:

  • Epitaxial growth of GaN buffer using a reversed stepped superlattice (RSSL) structure on 200 mm SOI substrates.
  • The RSSL buffer comprises two superlattice (SL) layers with varying Aluminum (Al) component ratios in reverse order.
  • Characterization of wafer bow, crystal quality, breakdown voltage, and buffer dispersion.

Main Results:

  • Achieved a well-controlled wafer bow ≤ ±50 µm for a 3.3 µm thick GaN buffer.
  • Obtained good crystal quality of GaN layers due to the compliant nature of the SOI substrate.
  • Demonstrated a breakdown voltage of 750 V for the 3.3 µm thick GaN buffer, with an estimated breakdown field strength of ~2.27 MV/cm.
  • RSSL buffer exhibited low dispersion (<10%), suitable for device fabrication.
  • Fabricated D-mode GaN HEMT showed an on/off ratio of ~10^9 and a breakdown voltage of 450 V.

Conclusions:

  • The RSSL buffer on SOI substrates effectively manages tensile stress, leading to reduced wafer curvature and improved GaN crystal quality.
  • The demonstrated GaN buffer structure offers superior breakdown field strength compared to GaN-on-Si.
  • This approach is promising for the fabrication of high-performance, reliable GaN power devices on large-diameter SOI wafers.