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Single-spin resonance in a van der Waals embedded paramagnetic defect.

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  • 13. Physikalisches Institut, Universität Stuttgart, Stuttgart, Germany.

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Researchers identified optically active spin defects in hexagonal boron nitride (hBN). These defects exhibit optically detected magnetic resonance, offering insights into their structure and dynamics for quantum applications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Optics

Background:

  • Two-dimensional van der Waals materials host numerous single-photon emitters.
  • Understanding optically active spin defects is crucial for quantum technologies.

Purpose of the Study:

  • To characterize optically detected magnetic resonance in isolated emitters within hexagonal boron nitride (hBN).
  • To elucidate the spin properties, electronic structure, and dynamics of these defects.

Main Methods:

  • Optically detected magnetic resonance (ODMR) spectroscopy.
  • Analysis of photokinetics and spin relaxation times (T1, T2).
  • Investigation of hyperfine coupling and its angular dependence.

Main Results:

  • Identified defect spins with isotropic g-factor (~2) and low zero-field splitting (<10 MHz).
  • Determined hyperfine coupling (~10 MHz) suggesting an out-of-plane delocalized π-electron.
  • Measured spin-lattice relaxation times (T1) of 13-17 μs and spin coherence times (T2) < 1 μs.

Conclusions:

  • The observed spin defects likely originate from substitutional impurities in hBN.
  • Results provide detailed insights into the structure, composition, and dynamics of optically active spin defects.
  • These findings advance the understanding of quantum emitters in 2D materials for potential quantum applications.