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Updated: Nov 6, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
La induced Si3 trimer bilayer on the Si(111) surface
Jun-Shuai Chai1, Guang Yang2, Jing Xu3
1Key Laboratory of Microelectronics & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lfxu@aphy.iphy.ac.cn wjt@aphy.iphy.ac.cn and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
We discovered a stable Si3 trimer bilayer reconstruction on Si(111) with lanthanum (La) coverage. This structure exhibits semiconducting properties and matches recent experimental findings.
Area of Science:
- Surface Science
- Materials Science
- Computational Physics
Background:
- The Si(111) surface is a fundamental system in surface science.
- Lanthanum adsorption on silicon surfaces can lead to complex reconstructions.
Purpose of the Study:
- To identify and characterize a novel surface reconstruction of a silicon trimer bilayer on Si(111) with lanthanum.
- To investigate the structural, electronic, and stability properties of this reconstruction.
Main Methods:
- First-principles calculations (Density Functional Theory).
- Analysis of electronic band structure and charge density.
- Simulation of Scanning Tunneling Microscopy (STM) images.
Main Results:
- Identification of a robust R30° reconstruction with Si3 trimers and two La atoms per unit cell.
- Discovery of distinct La valence states (La2+ and La3+) and a honeycomb-like network.
- Confirmation of semiconducting behavior with a 42 meV surface band gap.
- Simulated STM images show excellent agreement with experimental observations.
Conclusions:
- The identified Si3 trimer bilayer reconstruction on Si(111) with La is structurally stable.
- The electronic properties indicate a narrow-gap semiconductor surface.
- The findings provide a theoretical basis for understanding experimental observations.
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