La induced Si3 trimer bilayer on the Si(111) surface

Jun-Shuai Chai1, Guang Yang2, Jing Xu3

  • 1Key Laboratory of Microelectronics & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lfxu@aphy.iphy.ac.cn wjt@aphy.iphy.ac.cn and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Summary

We discovered a stable Si3 trimer bilayer reconstruction on Si(111) with lanthanum (La) coverage. This structure exhibits semiconducting properties and matches recent experimental findings.