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Stretchable Inorganic GaN-Nanowire Photosensor with High Photocurrent and Photoresponsivity.
Sangmoon Han1, Siyun Noh1, Jong-Woong Kim1
1Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea.
ACS Applied Materials & Interfaces
|May 10, 2021
Summary
Researchers developed highly efficient stretchable photosensors using gallium nitride nanowires (GaN NWs) and graphene. These wearable sensors maintain excellent performance under strain, showing potential for practical applications in flexible electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Wearable systems require stretchable components for effective implementation.
- Developing robust and efficient stretchable photosensors is crucial for advanced electronic applications.
Purpose of the Study:
- To fabricate highly efficient stretchable photosensors using inorganic gallium nitride nanowires (GaN NWs) and graphene.
- To investigate the performance and stability of these stretchable photosensors under various strain levels.
- To analyze the carrier behavior at the nanowire-graphene interface for superior performance.
Main Methods:
- Fabrication of stretchable photosensors using GaN NWs and graphene on polyurethane substrates via the pre-strain method.
- Characterization of photosensor performance, including photocurrent and photoresponsivity, under different strain conditions.
- Analysis of carrier dynamics using an equivalent circuit model.
- Evaluation of device stability through 1000 stretching cycles.
- Testing in wearable applications by attaching sensors to finger and wrist joints.
Main Results:
- Achieved highly efficient stretchable photosensors with GaN NWs and graphene.
- Demonstrated excellent performance under 50% strain, retaining 87.5% of initial photocurrent (0.91 mA) and exhibiting a photoresponsivity of 11.38 A/W.
- Observed superior performance compared to previously reported stretchable semiconductor photosensors.
- Confirmed device stability after 1000 stretching cycles, with minimal degradation in photocurrent (0.96 mA) and photoresponsivity (11.96 A/W).
- Successfully monitored photocurrents during joint movements, indicating practical application potential.
Conclusions:
- The pre-strain method effectively produced stable and high-performance stretchable GaN-NW/graphene photosensors.
- These stretchable photosensors offer significant advantages in photocurrent and photoresponsivity for wearable applications.
- The developed GaN-NW photosensors show great promise for integration into flexible and wearable electronic systems.
