Large-scale growth of few-layer two-dimensional black phosphorus

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional materials offer potential for next-generation semiconductor devices.
• Black phosphorus (BP) is a promising layered semiconductor with tunable bandgap and high carrier mobility.
• Current limitations in large-scale BP synthesis hinder device development.

Purpose of the Study:

• To achieve centimeter-scale growth of ultrathin black phosphorus (BP).
• To fabricate large-scale field-effect transistor arrays using the synthesized BP.
• To evaluate the performance of BP-based transistors for potential applications.

Main Methods:

• Utilized pulsed laser deposition (PLD) for BP growth.
• Leveraged a unique plasma-activated region during laser ablation to facilitate BP cluster formation and transport.
• Fabricated large-scale field-effect transistor arrays on the centimeter-scale BP films.

Main Results:

• Successfully grew ultrathin BP on a centimeter scale.
• Achieved high hole mobility in fabricated field-effect transistors: up to 213 cm² V^-1 s^-1 at 295 K and 617 cm² V^-1 s^-1 at 250 K.
• Demonstrated the feasibility of large-scale BP-based wafer-scale devices.

Conclusions:

• Pulsed laser deposition enables scalable synthesis of ultrathin black phosphorus.
• The developed BP films support high-performance transistor arrays.
• This work paves the way for advanced electronic devices and information industry applications.