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Updated: Nov 6, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Local structural distortions in SnTe investigated by EXAFS
P Fornasini1, R Grisenti1, M Dapiaggi2
1Dipartimento di Fisica - Università di Trento, Via Sommarive 14, I-38123 Povo (Trento), Italy.
Abstract:
Extended x-ray absorption fine structure (EXAFS) has been measured at theKedge of Sn in SnTe in the temperature range from 5 to 480 K. EXAFS results are consistent with the presence of a local rhombohedral distortion in the full temperature range from 5 to 300 K, even well above the ferroelectric transition temperature, suggesting a partial order-disorder character of the transition. At and above 300 K, the anomalous behaviour of the third and fourth EXAFS cumulants reveals a modification of the anharmonicity of the effective pair potential, possibly connected with the softening of high frequency modes or to the presence of multiple phases.
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