Atomic Force Microscopy
Scanning Electron Microscopy
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Updated: Nov 6, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
P Fornasini1, R Grisenti1, M Dapiaggi2
1Dipartimento di Fisica - Università di Trento, Via Sommarive 14, I-38123 Povo (Trento), Italy.
Extended X-ray Absorption Fine Structure (EXAFS) reveals local rhombohedral distortion in SnTe up to 300 K. Above 300 K, changes in anharmonicity suggest phase transitions or mode softening.
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