Work Function Modulation of Few-Layer Graphene by Swift Heavy Ion Irradiation

Here, we report the structural and electronic modification induced in chemical vapor deposited graphene by using swift heavy ions (70 MeV Ni⁶⁺).Raman spectroscopy was used to quantify the irradiation-induced modification in vibrational properties. The increase in defect density with fluence causes an increase in the intensity ratio of its characteristic Raman D and G band. The increase in defect density also results in a decrease in crystallite size. The changes in the crystal structure are observed from X-rays diffraction measurement. Swift heavy ion irradiation induced defect, modified the surface roughness and surface potential of graphene thin film as measured from atomic force microscopy and scanning Kelvin probe microscopy respectively. The increase in the work function, surface roughness as well as defect concentration with fluence, indicate the possibility of linear correlation between them. Presence of defects in graphene sheets strongly affects surface electronic and optical properties of the material that can be used to tailor the optoelectronics device performance.