Analyses of pattern quality in roll-to-roll digital maskless lithography with positional errors.

Area of Science:

• Materials Science and Engineering
• Nanotechnology
• Manufacturing Processes

Background:

• Roll-to-roll digital maskless lithography (R2R DML) is a promising technique for high-throughput patterning.
• Surface deformation in R2R DML equipment can lead to significant positional errors, compromising pattern quality and device performance.
• Understanding the impact of these errors is crucial for optimizing R2R DML processes.

Purpose of the Study:

• To investigate the relationship between positional errors and pattern quality in R2R DML.
• To quantify the effect of positional errors on linewidth and line edge roughness.
• To identify strategies for mitigating the negative impacts of positional errors on lithography outcomes.

Main Methods:

• Simulations were employed to model the patterning process in R2R DML.
• The study analyzed the correlation between various positional error orientations and their impact on pattern fidelity.
• Defect analysis was performed to identify instances of incomplete photoresist exposure due to positioning inaccuracies.

Main Results:

• Positional errors perpendicular to the pattern direction had a 1.3-2 times greater detrimental effect on linewidth and line edge roughness compared to errors parallel to the pattern direction.
• Simulations confirmed that positioning errors can result in defects, including incomplete photoresist exposure.
• Controlling the array spot separation length was identified as a viable method to reduce the impact of positional errors.

Conclusions:

• Positional errors are a critical factor affecting pattern quality in R2R DML.
• The orientation of positional errors significantly influences their impact on critical lithographic parameters.
• Optimizing array spot separation is a key strategy for enhancing the precision and quality of R2R DML.