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Recoil implantation using gas-phase precursor molecules.

Angus Gale1, Johannes E Fröch1, Mehran Kianinia1

  • 1School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia. johannes.froech@uts.edu.au milos.toth@uts.edu.au.

Nanoscale
|May 14, 2021
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Summary
This summary is machine-generated.

Researchers developed a new recoil implantation method using gas precursors for precise material property control. This technique expands the range of implantable species beyond solid films, enabling new applications in materials science.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Physics

Background:

  • Ion implantation precisely controls material properties for diverse technologies.
  • Recoil implantation offers advantages but is limited to solid thin film precursors.
  • Current methods restrict implantable species, hindering broader applications.

Purpose of the Study:

  • To overcome the limitations of solid film precursors in recoil implantation.
  • To demonstrate recoil implantation using gas-phase precursors.
  • To expand the applicability of recoil implantation to a wider range of elements and processes.

Main Methods:

  • Utilized an argon (Ar+) ion beam for momentum transfer.
  • Employed nitrogen-containing gas precursors: N2, NH3, and NF3.
  • Fabricated nitrogen-vacancy (NV) color centers in diamond.

Main Results:

  • Successfully demonstrated recoil implantation using gas-phase precursors.
  • Achieved fabrication of nitrogen-vacancy (NV) color centers in diamond.
  • Overcame the limitation of using only solid thin films for implantation.

Conclusions:

  • Gas-phase recoil implantation significantly broadens the scope of applicable elements.
  • This method is suitable for applications where thin film deposition is impractical.
  • Expands the utility of recoil implantation for materials modification and device fabrication.