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In gas chromatography, different detectors are employed to meet specific analytical needs. These detectors are often categorized based on their detection mechanisms and the types of compounds they are best suited to analyze. Thermal Conductivity Detectors (TCD), Flame Ionization Detectors (FID), and Electron Capture Detectors (ECD) represent common categories, each with unique operating principles and applications. However, beyond these, several other detectors are designed for more specialized...

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Applying X-ray Imaging Crystal Spectroscopy for Use as a High Temperature Plasma Diagnostic

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Published on: August 25, 2016

CdTe X/γ-ray Detectors with Different Contact Materials.

Volodymyr Gnatyuk¹, Olena Maslyanchuk², Mykhailo Solovan²

¹V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Prospekt Nauky 41, 03028 Kyiv, Ukraine.

Sensors (Basel, Switzerland)

|June 2, 2021

Summary

This summary is machine-generated.

This study explores new contact materials and deposition techniques for high-performance cadmium telluride (CdTe) X/γ-ray detectors. Optimized In/CdTe/Au detectors with a p-n junction achieved excellent energy resolution for sensitive radiation detection.

Keywords:

CdTe detectors Schottky contact X-ray and γ-ray spectroscopy charge transport mechanism p-n junction

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Published on: March 6, 2020

Area of Science:

Materials Science
Semiconductor Physics
Radiation Detection Technology

Background:

High-performance room temperature cadmium telluride (CdTe)-based X/γ-ray detectors are crucial for various applications.
Optimizing contact materials and deposition techniques is key to enhancing detector performance.
Existing detectors face limitations in performance and operational range.

Purpose of the Study:

To develop and investigate heterostructures with various ohmic and Schottky contacts for CdTe detectors.
To explore the impact of surface pre-treatment on contact properties.
To analyze current transport mechanisms and optimize detector performance, particularly for p-n junction diodes.

Main Methods:

Fabrication of heterostructures using DC reactive magnetron sputtering and vacuum thermal evaporation.
Creation of In/CdTe/Au diodes with a p-n junction via laser-induced doping.
Analysis of current-voltage (I-V) characteristics and application of transport models (generation-recombination, space-charge limited current, Poole-Frenkel effect).

Main Results:

Ohmic and Schottky contacts were successfully formed on p-CdTe crystals, with MoO_x exhibiting tunable properties based on surface treatment.
Transport processes in Schottky diodes were modeled, yielding parameters like trap densities and carrier lifetimes.
Laser-induced doping in In/CdTe/Au p-n junction diodes extended the operational voltage range and demonstrated high energy resolutions (e.g., 1.6% at 662 keV).

Conclusions:

Optimized contact engineering and laser-induced doping significantly enhance the performance of CdTe-based radiation detectors.
The developed In/CdTe/Au p-n junction diodes offer superior energy resolution for X/γ-ray detection.
These advancements pave the way for more sensitive and reliable CdTe radiation detection systems.