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Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
A S Kazakov1, A V Galeeva1, A I Artamkin1
1Physics Department, M.V. Lomonosov Moscow State University, Moscow, 119991, Russia.
Abstract:
In this paper, we show that electron states formed in topological insulators at the interfaces topological phase-trivial phase and topological phase-vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1-xCdxTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film-trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film-vacuum.
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