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Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
Youngjun Park1, Seong Hun Kim1, Donghwa Lee2,3
1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
Nature Communications
|June 11, 2021
Summary
Researchers designed a new halide perovskite (HP) for ultra-fast resistive switching memory. This lead-free material offers stable operation and avoids environmental concerns, paving the way for next-generation storage devices.
Area of Science:
- Materials Science
- Solid-State Electronics
- Computational Chemistry
Background:
- Resistive switching memory utilizing halide perovskites (HP) shows promise for next-generation storage due to low operating voltage and high on/off ratios.
- Current HP-based memory faces challenges in stable operation and fast switching speeds, limiting practical applications.
- Optimizing HP material design from the initial stages is crucial for advancing memory technology.
Purpose of the Study:
- To design and identify optimal halide perovskite compositions for high-performance resistive switching memory.
- To investigate the relationship between material properties (stability, vacancy formation, migration) and memory performance.
- To develop a lead-free perovskite material for environmentally conscious and efficient memory devices.
Main Methods:
- Employed high-throughput screening combined with first-principles calculations to investigate 696 perovskite compositions across four crystal structures.
- Evaluated essential parameters such as material stability, vacancy formation energies, and ion migration barriers as key descriptors.
- Utilized computational methods to predict and compare the switching speeds of devices based on different HP structures.
Main Results:
- Identified dimer-Cs3Sb2I9 as an optimal halide perovskite for memory applications.
- The designed dimer-Cs3Sb2I9 memory exhibited ultra-fast switching speeds of approximately 20 nanoseconds.
- Demonstrated significantly faster switching (~20 ns) compared to devices using layer-Cs3Sb2I9 perovskites (>100 ns).
- Confirmed the lead-free nature of the selected perovskite, mitigating environmental concerns associated with lead-based materials.
Conclusions:
- The study successfully demonstrated the feasibility of designing resistive switching memory with ultra-fast switching speeds using computational screening.
- Dimer-Cs3Sb2I9 emerges as a promising lead-free halide perovskite for next-generation memory devices.
- The findings highlight the importance of material design and computational approaches in overcoming limitations of current memory technologies.
