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Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor

Mingzhi Dai1, Weiliang Wang2,3, Pengjun Wang3,4

  • 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China. daimz@nimte.ac.cn.

Scientific Reports
|June 11, 2021
PubMed
Summary

No abstract available in PubMed .

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