Related Experiment Video
Updated: Nov 2, 2025

05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
9.9K
Voltage Fluctuations in ac Biased Superconducting Transition-Edge Sensors
L Gottardi1, M de Wit1, E Taralli1
1NWO-I/SRON Netherlands Institute for Space Research, Niels Bohrweg 4, 2333 CA Leiden, Netherlands.
Physical Review Letters
|June 11, 2021
Summary
We identified key noise sources in superconducting transition-edge sensors (TESs). Equilibrium Johnson noise from quasiparticles and Josephson frequency fluctuations explain excess noise in TES detectors.
Area of Science:
- Physics
- Superconductivity
- Sensor Technology
Background:
- Superconducting transition-edge sensors (TESs) are crucial for sensitive measurements.
- Understanding noise sources is vital for optimizing TES performance.
- TESs are often modeled as superconducting weak links.
Purpose of the Study:
- To analyze fundamental noise sources in superconducting transition-edge sensors (TESs).
- To investigate noise behavior as a function of bath temperature, normal resistance, and geometry.
- To explain the origin of excess noise observed in TES detectors.
Main Methods:
- Detailed noise analysis of superconducting transition-edge sensors (TESs).
- AC voltage biasing at MHz frequencies.
- Studying noise in the resistive transition across varying detector parameters and bath temperatures.
Main Results:
- Excess noise in the TES electrical bandwidth is explained by equilibrium Johnson noise of quasiparticles.
- Fluctuations at the Josephson frequency and its harmonics significantly contribute to voltage noise.
- The nonlinear response of the weak link, with a sinusoidal current-phase relation, mediates this contribution.
Conclusions:
- Equilibrium Johnson noise and Josephson frequency fluctuations are primary noise contributors in biased TESs.
- The weak link model accurately describes noise behavior in TES detectors.
- This analysis provides a fundamental understanding for improving TES sensor design and performance.
More Related Videos
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
404
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
404
Biasing of FET
421
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
421
Biasing of P-N Junction
1.2K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.2K
Magnetic Field Due to Two Straight Wires
3.5K
Consider two parallel straight wires carrying a current of 10 A and 20 A in the same direction and separated by a distance of 20 cm. Calculate the magnetic field at a point "P2", midway between the wires. Also, evaluate the magnetic field when the direction of the current is reversed in the second wire.
3.5K
Frequency Response of BJT
1.1K
The frequency response of a Bipolar Junction Transistor (BJT) in a common-emitter configuration is critical to its functionality, especially in applications involving amplification of alternating current (AC) signals. This response can be analyzed through low-frequency and high-frequency equivalent circuits, considering various internal parameters and external conditions.
Low-Frequency Response: At low frequencies, the behavior of the BJT is determined by its DC bias point, which is set by the...
Low-Frequency Response: At low frequencies, the behavior of the BJT is determined by its DC bias point, which is set by the...
1.1K
Magnetic Field Due To A Thin Straight Wire
5.6K
Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
5.6K

