Resolution of non-destructive imaging by controlled acceleration voltage in scanning electron microscopy

Area of Science:

• Materials Science
• Nanotechnology
• Semiconductor Device Physics

Background:

• Miniaturization of nanoelectronic devices, like magnetic random access memory (MRAM), necessitates advanced quality assurance methods.
• Evaluating buried interfaces is critical for ensuring the reliability and performance of next-generation MRAM.

Purpose of the Study:

• To develop and assess a new non-destructive sub-surface interfacial characterization technique.
• To determine the resolution capabilities of this technique for imaging buried interfaces in nanoelectronic devices.

Main Methods:

• Grew sub-nanometric layers of tungsten (W) and platinum (Pt) beneath a controlled-thickness capping layer.
• Employed a novel non-destructive imaging method for sub-surface interfacial characterization.
• Systematically evaluated the resolution limits of the technique in the in-plane direction.

Main Results:

• The developed technique demonstrates capability for non-destructive characterization of buried interfaces.
• Experimental data confirms the technique can resolve features down to approximately 2 nanometers (nm) in the in-plane direction.
• Achieved resolution is sufficient for imaging critical components in miniaturized nanoelectronic devices.

Conclusions:

• The new non-destructive imaging technique is suitable for quality assurance of buried interfaces in nanoelectronic devices.
• The demonstrated sub-2 nm resolution meets the requirements for imaging advanced, small-cell MRAM.
• This method offers a valuable tool for advancing the development and manufacturing of high-performance nanoelectronic devices.