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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip.
Zhitang Song1, Daolin Cai1, Yan Cheng2
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China. ztsong@mail.sim.ac.cn caidl@mail.sim.ac.cn.
Nanoscale
|June 17, 2021
Summary
This correction clarifies the implementation of 12-state multi-level cell storage in a 128 Mb phase change memory chip. It ensures accurate reporting of advanced data storage technologies in nanoscale devices.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Engineering
Context:
- Phase-change memory (PCM) is a promising non-volatile memory technology.
- Multi-level cell (MLC) storage enhances data density.
- Implementing higher-order MLCs (e.g., 12-state) presents significant challenges.
Purpose:
- To correct and clarify details regarding the implementation of 12-state MLC storage.
- To ensure the accuracy of the reported 128 Mb phase change memory chip design.
- To provide precise information for researchers in the field of advanced memory technologies.
Summary:
- This correction addresses the '12-state multi-level cell storage implemented in a 128 Mb phase change memory chip' paper.
- It rectifies specific technical details concerning the successful integration of 12 distinct states per memory cell.
- The correction ensures the fidelity of the reported experimental results and device architecture.
Impact:
- Accurate reporting of advanced memory technologies is crucial for scientific progress.
- Clarifications in high-density storage solutions like 12-state MLCs aid future research and development.
- Ensures the integrity of the scientific record for phase change memory advancements.
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