Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

553
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
553
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

403
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
403
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

603
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
603
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

558
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
558

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Effectiveness and safety of Ayurvedic intervention in essential hypertension: a systematic review with meta-analysis.

Frontiers in pharmacology·2026
Same author

Low-cost fabrication and characterization process for development of a sensitive optical fiber structure.

Applied optics·2022
Same author

Fabrication and diameter analysis of a single-ended SMF tip structure.

Applied optics·2022
Same author

Synthesis and characterization of gold nanoparticles and graphene oxide for the development of optical fiber biosensors.

Applied optics·2022
Same author

Colorectal Carcinogenesis, Radiation Quality, and the Ubiquitin-Proteasome Pathway.

Journal of Cancer·2016
Same author

Up regulation of A2B adenosine receptor on monocytes are crucially required for immune pathogenicity in Indian patients exposed to Leishmania donovani.

Cytokine·2016
Same journal

Multifunctional reconfigurable terahertz metasurface based on vanadium dioxide phase transition: achieving broadband absorption and efficient polarization conversion.

Applied optics·2026
Same journal

High-Q-factor electromagnetically induced transparency utilizing quasi-bound states in the continuum in an all-dielectric terahertz metasurface.

Applied optics·2026
Same journal

Automated stitching interferometry for high-precision metrology of X-ray mirrors.

Applied optics·2026
Same journal

Experimental demonstration of an approach to designing a metal-dielectric DBR resonant cavity structure.

Applied optics·2026
Same journal

High-precision wavefront reconstruction from a single-shot interferogram using a physics-driven hybrid feature calibration network.

Applied optics·2026
Same journal

Ultra-high-Q Fano resonance based on coupled topological corner states in Kagome photonic crystals.

Applied optics·2026
See all related articles

Related Experiment Video

Updated: Nov 1, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.5K

Optimized plasmonic reversible logic gate for low loss communication.

Kuldeep Choudhary, Santosh Kumar

    Applied Optics
    |June 18, 2021
    PubMed
    Summary
    This summary is machine-generated.

    This study presents a novel plasmonic optical waveguide design for a Feynman logic gate, significantly reducing power consumption and information loss for reversible computing applications.

    More Related Videos

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    15.0K
    Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
    09:00

    Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

    Published on: December 11, 2013

    5.4K

    Related Experiment Videos

    Last Updated: Nov 1, 2025

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
    15:47

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

    Published on: November 1, 2013

    16.5K
    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    15.0K
    Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
    09:00

    Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

    Published on: December 11, 2013

    5.4K

    Area of Science:

    • Optoelectronics
    • Nanophotonics
    • Plasmonics

    Background:

    • Reversible computing requires logic gates to minimize information loss and power consumption.
    • Plasmonic optical waveguides enable controlled fabrication of nanostructures for advanced optical devices.

    Purpose of the Study:

    • To design and simulate a Feynman logic gate using a metal-insulator-metal optical waveguide.
    • To evaluate the performance of the proposed Feynman logic gate in terms of footprint, extinction ratio, and insertion loss.

    Main Methods:

    • Simulation of the Feynman logic gate using a cascading metal-insulator-metal optical waveguide based on Mach-Zehnder interferometers.
    • Utilizing the finite difference time domain (FDTD) method for numerical simulation.
    • Verification of simulation results through mathematical computation in MATLAB.

    Main Results:

    • The proposed Feynman logic gate achieves a footprint of 62 µm × 9 µm.
    • The device exhibits an extinction ratio of 10.57 dB.
    • Insertion losses are measured at -0.969 dB and -1.191 dB, outperforming existing electro-optic designs.

    Conclusions:

    • The developed plasmonic optical waveguide Feynman logic gate offers superior performance compared to electro-optic alternatives.
    • This design is a promising advancement for low-power, high-efficiency reversible computing systems.