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Epitaxially Grown InP Micro-Ring Lasers.

Wei Wen Wong1, Zhicheng Su1, Naiyin Wang1

  • 1Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.

Nano Letters
|June 18, 2021
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Summary

Researchers developed scalable epitaxial growth for indium phosphide (InP) micro-ring lasers. These lasers offer efficient room-temperature operation and enable precise mode engineering for advanced optoelectronics.

Keywords:
III−V semiconductor lasersintegrated light sourcelasing mode engineeringmicro-ring laserselective area epitaxy

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Area of Science:

  • Optoelectronics
  • Semiconductor physics
  • Materials science

Background:

  • Miniature lasers are crucial for optical communications and sensing, driven by the Fourth Industrial Revolution.
  • Existing top-down fabricated III-V semiconductor lasers face challenges in scalability and sidewall roughness, hindering high-density integration.

Purpose of the Study:

  • To demonstrate indium phosphide (InP) micro-ring lasers using a scalable epitaxial growth technique.
  • To achieve efficient room-temperature lasing and explore lasing mode engineering in these devices.

Main Methods:

  • Fabrication of InP micro-ring lasers via a highly scalable epitaxial growth method.
  • Optical pumping to achieve lasing.
  • Experimental tuning of vertical ring height for mode engineering, supported by modeling.

Main Results:

  • Demonstrated efficient room-temperature lasing in optically pumped InP micro-ring lasers.
  • Achieved a low lasing threshold of approximately 50 μJ cm-2 per pulse.
  • Successfully demonstrated lasing mode engineering by adjusting the vertical ring height.

Conclusions:

  • The scalable epitaxial growth technique overcomes limitations of traditional fabrication methods for III-V micro-ring lasers.
  • This work represents a significant advancement towards high-density monolithic integration of miniature lasers on optoelectronic devices.