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Low-Cutoff Frequency Reduction in Neural Amplifiers: Analysis and Implementation in CMOS 65 nm
Fereidoon Hashemi Noshahr1, Morteza Nabavi1, Benoit Gosselin2
1Polystim Neurotech. Lab., Department of Electrical Engineering, Polytechnique Montreal, Montreal, QC, Canada.
Frontiers in Neuroscience
|June 21, 2021
Summary
Advanced CMOS technology scaling increases neural amplifier low-cutoff frequency. This study proposes two methods to reduce low-cutoff frequency without increasing feedback capacitors, improving neural recording performance.
Area of Science:
- Electrical Engineering
- Biomedical Engineering
- Microelectronics
Background:
- Scaling down CMOS technology degrades neural amplifier performance, increasing low-cutoff frequency due to short-channel effects and reduced input resistance.
- Increasing feedback capacitors to lower cutoff frequency is undesirable as it reduces input impedance and increases area.
- Reduced operational transconductance amplifier (OTA) input resistance, caused by gate oxide leakage, is identified as the primary cause of increased low-cutoff frequency.
Purpose of the Study:
- To analytically investigate the small-signal behavior of AC-coupled neural amplifiers and identify the root cause of increased low-cutoff frequency in advanced CMOS nodes.
- To propose and evaluate two novel solutions for reducing the low-cutoff frequency without increasing feedback capacitor values.
- To demonstrate improved neural amplifier performance for in vitro brain recordings.
Main Methods:
- Analytical analysis of neural amplifier small-signal behavior to understand the impact of CMOS scaling on input resistance.
- Simulation of a cross-coupled positive feedback technique using pseudoresistors to increase OTA input resistance.
- Design and fabrication of a neural amplifier utilizing thick-oxide MOS transistors in the input differential pair of the OTA within a 65 nm TSMC CMOS process.
Main Results:
- The cross-coupled positive feedback method achieved a simulated low-cutoff frequency of 1.5 Hz with a midband gain of 30.4 dB and power consumption of 0.6 μW.
- The fabricated neural amplifier using thick-oxide transistors demonstrated a bandwidth of 2 Hz to 5.6 kHz, a midband gain of 34.3 dB, and consumed 3.63 μW at 1 V.
- The fabricated amplifier achieved an input-referred noise of 6.1 μV and occupied a silicon area of 0.04 mm².
Conclusions:
- The study successfully identified reduced OTA input resistance due to gate oxide leakage as the cause of increased low-cutoff frequency in scaled CMOS.
- Two effective methods, cross-coupled positive feedback and the use of thick-oxide transistors, were proposed and validated to reduce low-cutoff frequency without compromising amplifier performance.
- The developed neural amplifiers show significant potential for high-fidelity in vitro neural recordings with low power consumption and small area.
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