Related Experiment Video
Updated: Nov 1, 2025

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc
Keonwon Beom1, Jimin Han2, Hyun-Mi Kim3
1School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA.
Abstract:
Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2-x) gate insulator and an indium-zinc oxide (IZO) channel layer for application to artificial synapses in neuromorphic systems. The drain current in these TFTs was reduced significantly by four orders of magnitude on application of a negative gate bias, then could be restored to its original value by applying a positive bias. The reduced drain current under negative biasing is interpreted as being caused by voltage-driven oxygen ion migration from the HfO2-x gate insulator to the IZO channel, which reduces the oxygen vacancy concentration in the IZO channel. In addition to emulating the analog-type potentiation and depression motions in artificial synapses, the tunable drain current presents paired-pulse facilitation and short-term and long-term plasticity behaviors. These wide-ranging and nonvolatile synaptic behaviors with tunable drain currents are indicative of the potential of the proposed TFTs for artificial synapse applications.
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