Superconducting Contacts to a Monolayer Semiconductor

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Monolayer molybdenum disulfide (MoS2) possesses significant electronic and optical properties.
• Superconducting contacts are crucial for developing advanced electronic devices.

Purpose of the Study:

• To demonstrate superconducting vertical interconnect access (VIA) contacts to monolayer MoS2.
• To explore the potential of MoS2 as a platform for superconducting hybrid devices.

Main Methods:

• Fabrication of MoRe superconducting contacts on monolayer MoS2.
• Characterization of electron transport properties, including superconductor/normal conductor junctions.
• Analysis of Andreev tunneling and superconducting proximity effects.
• Magnetoresistance measurements to assess MoS2 bandstructure and carrier mobility.

Main Results:

• Successful demonstration of superconducting VIA contacts to monolayer MoS2.
• Observation of a clear superconducting gap and dominant superconductor/normal conductor junction behavior.
• Evidence of resonant Andreev tunneling and junction-dependent gap characteristics, indicating a superconducting proximity effect.
• Magnetoresistance data confirmed intact bandstructure and high carrier mobility in MoS2.

Conclusions:

• MoRe superconducting contacts enable superconducting proximity effects in monolayer MoS2.
• This approach is versatile for various layered materials and superconducting contacts.
• Monolayer semiconductors can serve as a platform for novel superconducting hybrid devices.