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Updated: Nov 1, 2025

Photochemical Oxidative Growth of Iridium Oxide Nanoparticles on CdSe@CdS Nanorods
Published on: February 11, 2016
Monolayer Iridium Sulfide Halides with High Mobility Transport Anisotropy and Highly Efficient Light Harvesting
Yang Song1,2, Jinbo Pan1,2, Yan-Fang Zhang1
1Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Abstract:
The discovery and design of two-dimensional semiconductors with high carrier mobilities is of vital importance for high-speed electronic and optoelectronic devices. Herein, based on high-throughput computations, we identify a group of semiconductors, iridium sulfide halides IrSX' (X' = F, Cl, Br, I), with high carrier mobilities (∼103 cm2 V-1 s-1) and highly efficient light harvesting (∼34%). Moreover, these materials exhibit anisotropic in-plane transport behavior, which is switchable via ferroelastic switching, providing the monolayer (ML) IrSX's great potential for applications in direction-controlled high-speed electronic and optoelectronic devices. The high carrier mobility and anisotropic transport are stemming from the anisotropic distribution of 3d orbitals of Ir atoms at the conduction band minimum (CBM) and valence band maximum (VBM) in the rectangular lattices. The ML IrSX's (X' = F, Cl, Br) show good dynamical and thermal stabilities and are thermodynamically stable based on phase diagram calculations, thus meriting experimental realization in the future.

