Field-Induced Rotational Symmetry Distortion of In-Plane Anisotropic Magnetoresistance in Kagome Semimetal Ni3In2Se2...

Transition-metal-based kagome compounds have recently attracted considerable attention due to their rich correlated electronic states and unconventional quantum transport phenomena, as well as their potential for anisotropic magnetotransport functionalities. Here, we report magnetic field-induced rotational symmetry distortion of the in-plane anisotropic magnetoresistance (AMR) in kagome semimetal Ni3In2Se2 nanoflakes synthesized via an iterative chemical vapor transport approach. High-quality Ni3In2Se2 nanoflakes possess a canted ferromagnetic order, along with a large magnetoresistance of 590%, an out-of-plane AMR of 200%, and a carrier mobility up to 8761 cm2 V-1 s-1. Furthermore, a large in-plane AMR of 41% and the planar Hall effect (PHE) are detected in Ni3In2Se2, with PHE stemming from the complex interaction of field-induced ferromagnetism and orbital magnetoresistance. Notably, the in-plane AMR exhibits a field-induced rotational symmetry distortion, characterized by the coexistence of the two-, four-, and six-fold AMR components. Band structure calculations suggest that the low-temperature distortions in the AMR of Ni3In2Se2 may arise from field-induced orbital polarization and field-enhanced Fermi surface anisotropy. Our findings contribute to understanding exotic transport behaviors in kagome semimetals and advancing low-power electronic devices and future spintronic applications.