Related Experiment Video
Updated: Nov 1, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Bending effect on the Majorana bound states in planar Josephson junctions
S A Hassan1, B H Wu1, X F Xu1
1Department of Applied Physics, Donghua University, 2999 North Renmin Road, Shanghai, 201620, People's Republic of China.
Abstract:
We consider the bending effect on the formation of Majorana bound states (MBSs) in planar Josephson junctions where the normal stripe is tilted in a V shape. Our results show that the MBSs remain robust for moderate bending angles. Beyond some critical angles, the degradation of MBSs can be revealed by its eigenspectrum as well as the Majorana polarization (MP). Our results show that the parameter space of bending angle for robust MBSs can be significantly enlarged by tuning the superconducting phase difference across the Josephson junction. These findings suggest that the interplay of the junction geometry and the device parameters provides richer degree of freedom in designing topological superconducting devices for future applications. The MP analysis is an indispensable tool for characterizing the Majorana states.
More Related Videos
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Unsymmetric Bending - Angle of Neutral Axis
When a bending moment is applied at an angle θ concerning the vertical axis of a symmetrical member, it can be resolved into components along the member's principal...
Unsymmetric Bending
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...